Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors
Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. However, the lack of an integrated anode is still an issue for vertical field-emission vacuum transistors for some applications such as radiation-hard...
| Main Authors: | , , , |
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2024
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| Online Access: | https://hdl.handle.net/1721.1/153655 |