Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated...
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| Format: | Article |
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AIP Publishing
2024
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| Online Access: | https://hdl.handle.net/1721.1/154264 |
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| author | Xie, Qingyun Niroula, John Rajput, Nitul S. Yuan, Mengyang Luo, Shisong Fu, Kai Isamotu, Mohamed Fadil Palash, Rafid Hassan Sikder, Bejoy Eisner, Savannah R. Surdi, Harshad Belanger, Aidan J. Darmawi-Iskandar, Patrick K. Aksamija, Zlatan Nemanich, Robert J. Goodnick, Stephen M. Senesky, Debbie G. Hunter, Gary W. Chowdhury, Nadim Zhao, Yuji Palacios, Tomás |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Xie, Qingyun Niroula, John Rajput, Nitul S. Yuan, Mengyang Luo, Shisong Fu, Kai Isamotu, Mohamed Fadil Palash, Rafid Hassan Sikder, Bejoy Eisner, Savannah R. Surdi, Harshad Belanger, Aidan J. Darmawi-Iskandar, Patrick K. Aksamija, Zlatan Nemanich, Robert J. Goodnick, Stephen M. Senesky, Debbie G. Hunter, Gary W. Chowdhury, Nadim Zhao, Yuji Palacios, Tomás |
| author_sort | Xie, Qingyun |
| collection | MIT |
| description | This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation. |
| first_indexed | 2024-09-23T17:03:29Z |
| format | Article |
| id | mit-1721.1/154264 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2025-02-19T04:26:18Z |
| publishDate | 2024 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1542642025-01-04T04:09:10Z Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Xie, Qingyun Niroula, John Rajput, Nitul S. Yuan, Mengyang Luo, Shisong Fu, Kai Isamotu, Mohamed Fadil Palash, Rafid Hassan Sikder, Bejoy Eisner, Savannah R. Surdi, Harshad Belanger, Aidan J. Darmawi-Iskandar, Patrick K. Aksamija, Zlatan Nemanich, Robert J. Goodnick, Stephen M. Senesky, Debbie G. Hunter, Gary W. Chowdhury, Nadim Zhao, Yuji Palacios, Tomás Massachusetts Institute of Technology. Microsystems Technology Laboratories Physics and Astronomy (miscellaneous) This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation. Department of Defense (DoD) Department of Energy (DOE) National Aeronautics and Space Administration (NASA) Lockheed Martin Corporation; Samsung Electronics Co., Ltd.; Semiconductor Research Corporation; Bangladesh University of Engineering and Technology 2024-04-23T14:11:09Z 2024-04-23T14:11:09Z 2024-04-22 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 https://hdl.handle.net/1721.1/154264 Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, Shisong Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, Aidan J. Belanger, Patrick K. Darmawi-Iskandar, Zlatan Aksamija, Robert J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios; Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments. Appl. Phys. Lett. 22 April 2024; 124 (17): 172104. 10.1063/5.0186976 10.1063/5.0186976 Applied Physics Letters Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing Author |
| spellingShingle | Physics and Astronomy (miscellaneous) Xie, Qingyun Niroula, John Rajput, Nitul S. Yuan, Mengyang Luo, Shisong Fu, Kai Isamotu, Mohamed Fadil Palash, Rafid Hassan Sikder, Bejoy Eisner, Savannah R. Surdi, Harshad Belanger, Aidan J. Darmawi-Iskandar, Patrick K. Aksamija, Zlatan Nemanich, Robert J. Goodnick, Stephen M. Senesky, Debbie G. Hunter, Gary W. Chowdhury, Nadim Zhao, Yuji Palacios, Tomás Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title | Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title_full | Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title_fullStr | Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title_full_unstemmed | Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title_short | Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments |
| title_sort | device and material investigations of gan enhancement mode transistors for venus and harsh environments |
| topic | Physics and Astronomy (miscellaneous) |
| url | https://hdl.handle.net/1721.1/154264 |
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