Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated...

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Bibliographic Details
Main Authors: Xie, Qingyun, Niroula, John, Rajput, Nitul S., Yuan, Mengyang, Luo, Shisong, Fu, Kai, Isamotu, Mohamed Fadil, Palash, Rafid Hassan, Sikder, Bejoy, Eisner, Savannah R., Surdi, Harshad, Belanger, Aidan J., Darmawi-Iskandar, Patrick K., Aksamija, Zlatan, Nemanich, Robert J., Goodnick, Stephen M., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: AIP Publishing 2024
Subjects:
Physics and Astronomy (miscellaneous)
Online Access:https://hdl.handle.net/1721.1/154264

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