Structural changes in HfSe2 and ZrSe2 thin films with various oxidation methods

Structural changes in HfSe2 and ZrSe2 thin films with various oxidation methods

HfSe2 and ZrSe2 transition metal dichalcogenide (TMD) films are of interest for their potential applications in field-effect transistors. To implement the use of these materials in devices, the formation of an oxide/TMD interface with well-defined dielectric/semiconductor properties is essential. Th...

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Bibliografski detalji
Glavni autori: Foucher, Alexandre C., Mortelmans, Wouter, Bing, Wu, Sofer, Zdeněk, Jaramillo, Rafael, Ross, Frances M.
Daljnji autori: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Članak
Izdano: Royal Society of Chemistry 2024
Online pristup:https://hdl.handle.net/1721.1/156710

Internet

https://hdl.handle.net/1721.1/156710

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