Structural changes in HfSe2 and ZrSe2 thin films with various oxidation methods
HfSe2 and ZrSe2 transition metal dichalcogenide (TMD) films are of interest for their potential applications in field-effect transistors. To implement the use of these materials in devices, the formation of an oxide/TMD interface with well-defined dielectric/semiconductor properties is essential. Th...
| Príomhchruthaitheoirí: | , , , , , |
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| Formáid: | Alt |
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Royal Society of Chemistry
2024
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| Rochtain ar líne: | https://hdl.handle.net/1721.1/156710 |