Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large cop...

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Detalles Bibliográficos
Main Authors: Hazard, TM, Woods, W, Rosenberg, D, Das, R, Hirjibehedin, CF, Kim, DK, Knecht, JM, Mallek, J, Melville, A, Niedzielski, BM, Serniak, K, Sliwa, KM, Yost, DRW, Yoder, JL, Oliver, WD, Schwartz, ME
Outros autores: Lincoln Laboratory
Formato: Artigo
Idioma:English
Publicado: AIP Publishing 2024
Acceso en liña:https://hdl.handle.net/1721.1/156908
Descripción
Summary:The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.