Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large cop...

詳細記述

書誌詳細
主要な著者: Hazard, TM, Woods, W, Rosenberg, D, Das, R, Hirjibehedin, CF, Kim, DK, Knecht, JM, Mallek, J, Melville, A, Niedzielski, BM, Serniak, K, Sliwa, KM, Yost, DRW, Yoder, JL, Oliver, WD, Schwartz, ME
その他の著者: Lincoln Laboratory
フォーマット: 論文
言語:English
出版事項: AIP Publishing 2024
オンライン・アクセス:https://hdl.handle.net/1721.1/156908
その他の書誌記述
要約:The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.