Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits
The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large cop...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing
2024
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| Online Access: | https://hdl.handle.net/1721.1/156908 |
| _version_ | 1810999803080867840 |
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| author | Hazard, TM Woods, W Rosenberg, D Das, R Hirjibehedin, CF Kim, DK Knecht, JM Mallek, J Melville, A Niedzielski, BM Serniak, K Sliwa, KM Yost, DRW Yoder, JL Oliver, WD Schwartz, ME |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Hazard, TM Woods, W Rosenberg, D Das, R Hirjibehedin, CF Kim, DK Knecht, JM Mallek, J Melville, A Niedzielski, BM Serniak, K Sliwa, KM Yost, DRW Yoder, JL Oliver, WD Schwartz, ME |
| author_sort | Hazard, TM |
| collection | MIT |
| description | The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches. |
| first_indexed | 2024-09-23T15:06:39Z |
| format | Article |
| id | mit-1721.1/156908 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:06:39Z |
| publishDate | 2024 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1569082024-09-20T03:11:57Z Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits Hazard, TM Woods, W Rosenberg, D Das, R Hirjibehedin, CF Kim, DK Knecht, JM Mallek, J Melville, A Niedzielski, BM Serniak, K Sliwa, KM Yost, DRW Yoder, JL Oliver, WD Schwartz, ME Lincoln Laboratory Massachusetts Institute of Technology. Research Laboratory of Electronics Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches. 2024-09-19T19:57:07Z 2024-09-19T19:57:07Z 2023-10-09 2024-09-19T19:50:18Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/156908 T. M. Hazard, W. Woods, D. Rosenberg, R. Das, C. F. Hirjibehedin, D. K. Kim, J. M. Knecht, J. Mallek, A. Melville, B. M. Niedzielski, K. Serniak, K. M. Sliwa, D. R. W. Yost, J. L. Yoder, W. D. Oliver, M. E. Schwartz; Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits. Appl. Phys. Lett. 9 October 2023; 123 (15): 154004. en 10.1063/5.0170055 Applied Physics Letters Creative Commons Attribution https://creativecommons.org/licenses/by/4.0/ application/pdf AIP Publishing AIP Publishing |
| spellingShingle | Hazard, TM Woods, W Rosenberg, D Das, R Hirjibehedin, CF Kim, DK Knecht, JM Mallek, J Melville, A Niedzielski, BM Serniak, K Sliwa, KM Yost, DRW Yoder, JL Oliver, WD Schwartz, ME Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title | Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title_full | Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title_fullStr | Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title_full_unstemmed | Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title_short | Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits |
| title_sort | characterization of superconducting through silicon vias as capacitive elements in quantum circuits |
| url | https://hdl.handle.net/1721.1/156908 |
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