The electrical and optical characterization of the InGaAs/InP alloy system
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/15957 |
| _version_ | 1826211501366575104 |
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| author | Towe, Elias D |
| author2 | Erich P. Ippen. |
| author_facet | Erich P. Ippen. Towe, Elias D |
| author_sort | Towe, Elias D |
| collection | MIT |
| description | Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981. |
| first_indexed | 2024-09-23T15:06:56Z |
| format | Thesis |
| id | mit-1721.1/15957 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T15:06:56Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/159572019-04-11T02:49:14Z The electrical and optical characterization of the InGaAs/InP alloy system Towe, Elias D Erich P. Ippen. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Indium alloys Epitaxy Semiconductor doping Optical communications Hall effect Photoluminescence Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981. MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. Includes bibliographical references. by Elias D. Towe. M.S. 2005-08-04T18:18:03Z 2005-08-04T18:18:03Z 1981 1981 Thesis http://hdl.handle.net/1721.1/15957 08950997 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 1, iv, 79 leaves 3782451 bytes 3782212 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Indium alloys Epitaxy Semiconductor doping Optical communications Hall effect Photoluminescence Towe, Elias D The electrical and optical characterization of the InGaAs/InP alloy system |
| title | The electrical and optical characterization of the InGaAs/InP alloy system |
| title_full | The electrical and optical characterization of the InGaAs/InP alloy system |
| title_fullStr | The electrical and optical characterization of the InGaAs/InP alloy system |
| title_full_unstemmed | The electrical and optical characterization of the InGaAs/InP alloy system |
| title_short | The electrical and optical characterization of the InGaAs/InP alloy system |
| title_sort | electrical and optical characterization of the ingaas inp alloy system |
| topic | Electrical Engineering and Computer Science. Indium alloys Epitaxy Semiconductor doping Optical communications Hall effect Photoluminescence |
| url | http://hdl.handle.net/1721.1/15957 |
| work_keys_str_mv | AT toweeliasd theelectricalandopticalcharacterizationoftheingaasinpalloysystem AT toweeliasd electricalandopticalcharacterizationoftheingaasinpalloysystem |