Electronic properties of Bi nanowaves
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002.
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Format: | Thesis |
Language: | eng |
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Massachusetts Institute of Technology
2005
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Online Access: | http://hdl.handle.net/1721.1/16820 |
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author | Cronin, Stephen B. (Stephen Burke), 1974- |
author2 | Mildred S. Dresselhaus. |
author_facet | Mildred S. Dresselhaus. Cronin, Stephen B. (Stephen Burke), 1974- |
author_sort | Cronin, Stephen B. (Stephen Burke), 1974- |
collection | MIT |
description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002. |
first_indexed | 2024-09-23T08:12:19Z |
format | Thesis |
id | mit-1721.1/16820 |
institution | Massachusetts Institute of Technology |
language | eng |
last_indexed | 2024-09-23T08:12:19Z |
publishDate | 2005 |
publisher | Massachusetts Institute of Technology |
record_format | dspace |
spelling | mit-1721.1/168202019-04-09T17:19:11Z Electronic properties of Bi nanowaves Electronic properties of bismuth nanowaves Cronin, Stephen B. (Stephen Burke), 1974- Mildred S. Dresselhaus. Massachusetts Institute of Technology. Dept. of Physics. Massachusetts Institute of Technology. Dept. of Physics. Physics. Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 2002. Includes bibliographical references (p. 119-120). This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Transport properties are reported for Bi nanowires, which have been prepared by the filling of an alumina template with molten Bi. Lithographic processes are devised to pattern 4-point electrodes on single Bi nanowires that have been removed from the alumina template. High resistance non-ohmic contacts are attributed to a thick oxide layer formed on the surface of the nanowires. The non-linear 2-point i(V) response of these contacts is understood on the basis of a tunneling model. Techniques are developed for making ohmic contacts to single bismuth nanowires through the thick oxide coating using a focused ion beam (FIB) to sputter away the oxide and then deposit contacts. By combining the FIB techniques with electron beam lithography we achieve contacts stable from 300K to 2K for nanowires less than 100nm in diameter. Annealing in H2 and also NH3 environments is found to reduce the oxide completely. However, the high tempertures required for this annealing are not compatible with the lithographic techniques. A method for preventing the burnout of nanowires by electrostatic discharge is developed. A lithographic scheme for measuring the Seebeck coefficient of a single Bi nanowire is devised. Techniques are also developed for measuring a single Bi nanowire inside the template. The electronic band structure of Bi nanowires is modeled theoretically based on the quantum confinement of electrons. 4-point resistivity data on single Bi nanowires are reported and understood on the basis of the theoretical model of the quantized electronic band structure and considering the wire boundary and grain boundary scattering not present in bulk bismuth. by Stephen B. Cronin. Ph.D. 2005-05-19T14:43:38Z 2005-05-19T14:43:38Z 2002 2002 Thesis http://hdl.handle.net/1721.1/16820 50762540 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 120 p. 2996462 bytes 2996216 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
spellingShingle | Physics. Cronin, Stephen B. (Stephen Burke), 1974- Electronic properties of Bi nanowaves |
title | Electronic properties of Bi nanowaves |
title_full | Electronic properties of Bi nanowaves |
title_fullStr | Electronic properties of Bi nanowaves |
title_full_unstemmed | Electronic properties of Bi nanowaves |
title_short | Electronic properties of Bi nanowaves |
title_sort | electronic properties of bi nanowaves |
topic | Physics. |
url | http://hdl.handle.net/1721.1/16820 |
work_keys_str_mv | AT croninstephenbstephenburke1974 electronicpropertiesofbinanowaves AT croninstephenbstephenburke1974 electronicpropertiesofbismuthnanowaves |