Characterization and modeling of polysilicon MEMS chemical-mechanical polishing
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
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Format: | Thesis |
Language: | eng |
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Massachusetts Institute of Technology
2005
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Online Access: | http://hdl.handle.net/1721.1/17983 |
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author | Tang, Brian D. (Brian David), 1980- |
author2 | Duane S. Boning. |
author_facet | Duane S. Boning. Tang, Brian D. (Brian David), 1980- |
author_sort | Tang, Brian D. (Brian David), 1980- |
collection | MIT |
description | Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. |
first_indexed | 2024-09-23T16:05:36Z |
format | Thesis |
id | mit-1721.1/17983 |
institution | Massachusetts Institute of Technology |
language | eng |
last_indexed | 2024-09-23T16:05:36Z |
publishDate | 2005 |
publisher | Massachusetts Institute of Technology |
record_format | dspace |
spelling | mit-1721.1/179832019-04-10T15:09:35Z Characterization and modeling of polysilicon MEMS chemical-mechanical polishing Tang, Brian D. (Brian David), 1980- Duane S. Boning. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. Includes bibliographical references (p. 74-75). Heavily used in the manufacture of integrated circuits, chemical-mechanical polishing (CMP) is becoming an enabling technology for microelectromechanical systems (MEMS). To reliably use CMP in the manufacturing process, designers must be able to accurately predict the CMP process and control final surface uniformity. This thesis extends integrated circuit CMP knowledge towards MEMS applications. Experiments were performed to characterize polysilicon MEMS CMP. A new test mask was created which contains test structures relevant to MEMS. Both single and dual material polish experiments were carried out and the resulting data fit against an adapted step height density model. Results show that integrated circuit CMP models are applicable to MEMS CMP, but the models need to be adjusted in order to contend with issues inherent to MEMS CMP. Further study may be necessary to accurately and completely characterize polysilicon MEMS CMP and make improvements to the models. by Brian D. Tang. M.Eng. 2005-06-02T19:30:25Z 2005-06-02T19:30:25Z 2004 2004 Thesis http://hdl.handle.net/1721.1/17983 57189433 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 75 p. 4544424 bytes 4552124 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
spellingShingle | Electrical Engineering and Computer Science. Tang, Brian D. (Brian David), 1980- Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title | Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title_full | Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title_fullStr | Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title_full_unstemmed | Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title_short | Characterization and modeling of polysilicon MEMS chemical-mechanical polishing |
title_sort | characterization and modeling of polysilicon mems chemical mechanical polishing |
topic | Electrical Engineering and Computer Science. |
url | http://hdl.handle.net/1721.1/17983 |
work_keys_str_mv | AT tangbriandbriandavid1980 characterizationandmodelingofpolysiliconmemschemicalmechanicalpolishing |