Analysis of DRIE uniformity for microelectromechanical systems

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.

Bibliographic Details
Main Author: Hill, Tyrone F. (Tyrone Frank), 1980-
Other Authors: Duane S. Boning.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2005
Subjects:
Online Access:http://hdl.handle.net/1721.1/18060
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author Hill, Tyrone F. (Tyrone Frank), 1980-
author2 Duane S. Boning.
author_facet Duane S. Boning.
Hill, Tyrone F. (Tyrone Frank), 1980-
author_sort Hill, Tyrone F. (Tyrone Frank), 1980-
collection MIT
description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
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spelling mit-1721.1/180602019-04-09T18:31:37Z Analysis of DRIE uniformity for microelectromechanical systems Analysis of deep reactive ion etch uniformity for MEMS Hill, Tyrone F. (Tyrone Frank), 1980- Duane S. Boning. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. Includes bibliographical references (p. 81-82). A quantitative model capturing pattern density effects in Deep Reactive Ion Etch (DRIE), which are important in MEMS, is presented. Our previous work has explored the causes of wafer-level variation and demonstrated die-to-die interactions resulting from pattern density and reactant species consumption. Several reports have focused on experimental evidence and modeling of feature level (aspect ratio) dependencies. This thesis contributes a computationally efficient and effective modeling approach which focuses on layout pattern density-induced nonuniformity in DRIE. This is a key component in an integrated model combining wafer-, die-, and feature-level DRIE dependencies to predict etch depth for an input layout and a characterized etch tool and process. The modeling approach proposed here is inspired by previous work in modeling of chemical mechanical polishing (CMP). Computationally, this involves the convolution of an etch "layout impulse response" function or filter with the layout information (or equivalently but more efficiently the multiplication of FFTs). The proposed model is validated by using a mask layer from the MIT Microengine project as a demonstration layout. The model can be tuned to predict the etch behavior to an accuracy of 0.1% RMS normalized error. Furthermore, a feature level model, which considers the effects of sidewall loading on the depletion of reactants is presented. Finally, methods of synthesizing dummy features to improve across-die uniformity in a layout are explored; a by tiling bare areas of the wafer into "fill zones," an improvement in intra-die uniformity is seen. In summary, a semi-empirical modeling approach has been developed for predicting the layout dependent pattern density nonuniformities present (cont.) in DRIE. The approach can be tuned to specific tools and processes, and is computationally efficient. The model can serve as the basis for layout optimization to improve DRIE uniformity. by Tyrone F. Hill. S.M. 2005-06-02T19:48:53Z 2005-06-02T19:48:53Z 2004 2004 Thesis http://hdl.handle.net/1721.1/18060 57418293 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 82 p. 3562736 bytes 3571608 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
Hill, Tyrone F. (Tyrone Frank), 1980-
Analysis of DRIE uniformity for microelectromechanical systems
title Analysis of DRIE uniformity for microelectromechanical systems
title_full Analysis of DRIE uniformity for microelectromechanical systems
title_fullStr Analysis of DRIE uniformity for microelectromechanical systems
title_full_unstemmed Analysis of DRIE uniformity for microelectromechanical systems
title_short Analysis of DRIE uniformity for microelectromechanical systems
title_sort analysis of drie uniformity for microelectromechanical systems
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/18060
work_keys_str_mv AT hilltyroneftyronefrank1980 analysisofdrieuniformityformicroelectromechanicalsystems
AT hilltyroneftyronefrank1980 analysisofdeepreactiveionetchuniformityformems