Hot-carrier reliability of MOSFETs at room and cryogenic temperature
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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| Format: | Thesis |
| Language: | en_US |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/28215 |
| _version_ | 1811076634575372288 |
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| author | Kim, SeokWon Abraham, 1970- |
| author2 | James E. Chung. |
| author_facet | James E. Chung. Kim, SeokWon Abraham, 1970- |
| author_sort | Kim, SeokWon Abraham, 1970- |
| collection | MIT |
| description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. |
| first_indexed | 2024-09-23T10:25:13Z |
| format | Thesis |
| id | mit-1721.1/28215 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:25:13Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/282152020-03-31T14:32:48Z Hot-carrier reliability of MOSFETs at room and cryogenic temperature Kim, SeokWon Abraham, 1970- James E. Chung. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. Vita. Includes bibliographical references. Hot-carrier reliability is an increasingly important issue as the geometry scaling of MOSFET continues down to the sub-quarter micron regime. The power-supply voltage does not scale at the same rate as the device dimensions, and thus, the peak lateral E-field in the channel increases. Hot-carriers, generated by this high lateral E-field, gain more kinetic energy and cause damage to the device as the geometry dimension of MOSFETs shortens. In order to model the device hot-carrier degradation accurately, accurate model parameter extraction is critically important. This thesis discusses the model parameters' dependence on the stress conditions and its implications in terms of the device lifetime prediction procedure. As geometry scaling approaches the physical limit of fabrication techniques, such as photolithography, temperature scaling becomes a more viable alternative. MOSFET performance enhancement has been investigated and verified at cryogenic temperatures, such as at 77K. However, hot-carrier reliability problems have been shown to be exacerbated at low temperature. As the mean-free path increases at low temperature due to reduced phonon-scattering, hot-carriers become more energetic at low temperature, causing more device degradation. It is clear that various hot-carrier reliability issues must be clearly understood in order to optimize the device performance vs. reliability trade-off, both at short channel lengths and low temperatures. This thesis resolves numerous, unresolved issues of hot-carrier reliability at both room and cryogenic temperature, and develops a general framework for hot carrier reliability assessment. by SeokWon Abraham Kim. Ph.D. 2005-09-26T19:10:31Z 2005-09-26T19:10:31Z 1999 1999 Thesis http://hdl.handle.net/1721.1/28215 43496249 en_US M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 151 leaves 6531377 bytes 6552373 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science Kim, SeokWon Abraham, 1970- Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title | Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title_full | Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title_fullStr | Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title_full_unstemmed | Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title_short | Hot-carrier reliability of MOSFETs at room and cryogenic temperature |
| title_sort | hot carrier reliability of mosfets at room and cryogenic temperature |
| topic | Electrical Engineering and Computer Science |
| url | http://hdl.handle.net/1721.1/28215 |
| work_keys_str_mv | AT kimseokwonabraham1970 hotcarrierreliabilityofmosfetsatroomandcryogenictemperature |