Capacitive displacement sensing for the Nanogate

Thesis (S.M.)--Massachusetts Institute of Technology, School of Architecture and Planning, Program in Media Arts and Sciences, 2004.

Bibliographic Details
Main Author: Ma, Hongshen, 1978-
Other Authors: Joseph A. Paradiso.
Format: Thesis
Language:en_US
Published: Massachusetts Institute of Technology 2005
Subjects:
Online Access:http://hdl.handle.net/1721.1/28345
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author Ma, Hongshen, 1978-
author2 Joseph A. Paradiso.
author_facet Joseph A. Paradiso.
Ma, Hongshen, 1978-
author_sort Ma, Hongshen, 1978-
collection MIT
description Thesis (S.M.)--Massachusetts Institute of Technology, School of Architecture and Planning, Program in Media Arts and Sciences, 2004.
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spelling mit-1721.1/283452019-04-11T05:45:47Z Capacitive displacement sensing for the Nanogate Ma, Hongshen, 1978- Joseph A. Paradiso. Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts and Sciences. Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts and Sciences. Architecture. Program in Media Arts and Sciences. Thesis (S.M.)--Massachusetts Institute of Technology, School of Architecture and Planning, Program in Media Arts and Sciences, 2004. Includes bibliographical references (p. 63-64). The Nanogate is a micro electro mechanical systems (MEMS) device that uses a cantilever structure to control the separation between two extremely flat surfaces. It has been proposed that the Nanogate be used as part of a nanoscale instrument for studying the behavior of fluids at the molecular scale. This thesis describes the development of an integrated capacitive displacement sensor which enables nanometer precision measurement of the separation of the surfaces of the Nanogate. The work in this thesis can be divided into two parts: fabrication of a new version of the Nanogate and the development of electronics for the capacitive sensor. The fabrication part involved redesigning the Nanogate package and fabrication process to integrate the capacitive sensing electrodes, as well as to improve the process yield. The development of capacitive sensing electronics for the Nanogate involved the design of an analog front-end to convert capacitance to voltage and a custom high precision data acquisition system to digitize the output. The measured capacitance is converted back to absolute displacement by calibration with a Michelson interferometer-based displacement sensor. The results show a resolution better than 0.1 nm and the long term drift error is less than 1 nm. by Hongshen Ma. S.M. 2005-09-26T19:55:15Z 2005-09-26T19:55:15Z 2004 2004 Thesis http://hdl.handle.net/1721.1/28345 55704325 en_US M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 92 p. 5661740 bytes 5672080 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology
spellingShingle Architecture. Program in Media Arts and Sciences.
Ma, Hongshen, 1978-
Capacitive displacement sensing for the Nanogate
title Capacitive displacement sensing for the Nanogate
title_full Capacitive displacement sensing for the Nanogate
title_fullStr Capacitive displacement sensing for the Nanogate
title_full_unstemmed Capacitive displacement sensing for the Nanogate
title_short Capacitive displacement sensing for the Nanogate
title_sort capacitive displacement sensing for the nanogate
topic Architecture. Program in Media Arts and Sciences.
url http://hdl.handle.net/1721.1/28345
work_keys_str_mv AT mahongshen1978 capacitivedisplacementsensingforthenanogate