On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004.
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| Format: | Thesis |
| Language: | en_US |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/28549 |
| _version_ | 1826212216346509312 |
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| author | Nayfeh, Osama Munir, 1980- |
| author2 | Dimitri A. Antoniadis. |
| author_facet | Dimitri A. Antoniadis. Nayfeh, Osama Munir, 1980- |
| author_sort | Nayfeh, Osama Munir, 1980- |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004. |
| first_indexed | 2024-09-23T15:18:12Z |
| format | Thesis |
| id | mit-1721.1/28549 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:18:12Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/285492019-04-11T13:55:12Z On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation Nayfeh, Osama Munir, 1980- Dimitri A. Antoniadis. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, June 2004. "May 2004." Includes bibliographical references (leaves 38-39). Subsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity. by Osama Munir Nayfeh. S.M. 2005-09-27T16:57:03Z 2005-09-27T16:57:03Z 2004 Thesis http://hdl.handle.net/1721.1/28549 57402101 en_US M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 39 leaves 1514040 bytes 1516230 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Nayfeh, Osama Munir, 1980- On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title | On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title_full | On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title_fullStr | On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title_full_unstemmed | On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title_short | On the relationship between carrier mobility and velocity in sub-50 mm MOSFETs via calibrated Monte Carlo simulation |
| title_sort | on the relationship between carrier mobility and velocity in sub 50 mm mosfets via calibrated monte carlo simulation |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/28549 |
| work_keys_str_mv | AT nayfehosamamunir1980 ontherelationshipbetweencarriermobilityandvelocityinsub50mmmosfetsviacalibratedmontecarlosimulation |