Germanium on insulator fabrication technology
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
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| Format: | Thesis |
| Language: | en_US |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/28556 |
| _version_ | 1811083207583465472 |
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| author | Hennessy, John, 1980- |
| author2 | . |
| author_facet | . Hennessy, John, 1980- |
| author_sort | Hennessy, John, 1980- |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. |
| first_indexed | 2024-09-23T12:28:26Z |
| format | Thesis |
| id | mit-1721.1/28556 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:28:26Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/285562019-04-11T13:55:10Z Germanium on insulator fabrication technology Hennessy, John, 1980- . Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. Includes bibliographical references (p. 53-55). As CMOS devices continue to scale to smaller dimensions, it has become clear that new materials and structures are needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer of a germanium layer to bulk silicon by means of wafer bonding and hydrogen-induced layer transfer. by John Hennessy. S.M. 2005-09-27T16:59:31Z 2005-09-27T16:59:31Z 2004 2004 Thesis http://hdl.handle.net/1721.1/28556 57418313 en_US M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 55 p. 2462794 bytes 2467410 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Hennessy, John, 1980- Germanium on insulator fabrication technology |
| title | Germanium on insulator fabrication technology |
| title_full | Germanium on insulator fabrication technology |
| title_fullStr | Germanium on insulator fabrication technology |
| title_full_unstemmed | Germanium on insulator fabrication technology |
| title_short | Germanium on insulator fabrication technology |
| title_sort | germanium on insulator fabrication technology |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/28556 |
| work_keys_str_mv | AT hennessyjohn1980 germaniumoninsulatorfabricationtechnology |