Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005.

Bibliographic Details
Main Author: Ross, April Denise, 1977-
Other Authors: Karen K. Gleason.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2007
Subjects:
Online Access:http://dspace.mit.edu/handle/1721.1/28846
http://hdl.handle.net/1721.1/28846
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author Ross, April Denise, 1977-
author2 Karen K. Gleason.
author_facet Karen K. Gleason.
Ross, April Denise, 1977-
author_sort Ross, April Denise, 1977-
collection MIT
description Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005.
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institution Massachusetts Institute of Technology
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spelling mit-1721.1/288462019-04-09T19:07:21Z Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics Ross, April Denise, 1977- Karen K. Gleason. Massachusetts Institute of Technology. Dept. of Chemical Engineering. Massachusetts Institute of Technology. Dept. of Chemical Engineering. Chemical Engineering. Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005. Includes bibliographical references. Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable film characterization tools to understand structure-property-processing fundamentals by quantifying structural bonding environments and relating those to the film properties. Nanocomposites were also produced using two novel techniques. First, crystal colloidal templates of polystyrene nanospheres were fabricated using evaporation-induced self-assembly. OSG was then deposited throughout the templates to create composite materials. Subsequently the polystyrene was removed upon thermal annealing to create highly porous OSG thin films. Second, ultrasonic atomization was used to deliver particles into a vacuum chamber during plasma-enhanced CVD of the organosilicon matrix to create composite thin films using an all-CVD technique. This process could extend CVD to applications currently only possible using wet processing techniques or multi-step processing. by April Denise Ross. Ph.D. 2007-12-07T19:19:36Z 2007-12-07T19:19:36Z 2005 2005 Thesis http://dspace.mit.edu/handle/1721.1/28846 http://hdl.handle.net/1721.1/28846 60388247 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/28846 http://dspace.mit.edu/handle/1721.1/7582 119 leaves application/pdf Massachusetts Institute of Technology
spellingShingle Chemical Engineering.
Ross, April Denise, 1977-
Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title_full Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title_fullStr Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title_full_unstemmed Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title_short Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
title_sort chemical vapor deposition of organosilicon composite thin films for porous low k dielectrics
topic Chemical Engineering.
url http://dspace.mit.edu/handle/1721.1/28846
http://hdl.handle.net/1721.1/28846
work_keys_str_mv AT rossaprildenise1977 chemicalvapordepositionoforganosiliconcompositethinfilmsforporouslowkdielectrics