Inorganic semiconductors for printed transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Program in Media Arts & Sciences, 1999.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1721.1/29147 |
| _version_ | 1826207892346241024 |
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| author | Ridley, Brent, 1974- |
| author2 | Joseph Jacobson. |
| author_facet | Joseph Jacobson. Ridley, Brent, 1974- |
| author_sort | Ridley, Brent, 1974- |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Program in Media Arts & Sciences, 1999. |
| first_indexed | 2024-09-23T13:56:36Z |
| format | Thesis |
| id | mit-1721.1/29147 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:56:36Z |
| publishDate | 2005 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/291472019-04-10T12:51:42Z Inorganic semiconductors for printed transistors Ridley, Brent, 1974- Joseph Jacobson. Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts & Sciences. Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts & Sciences. Architecture. Program in Media Arts & Sciences. Thesis (S.M.)--Massachusetts Institute of Technology, Program in Media Arts & Sciences, 1999. Includes bibliographical references (leaves 49-51). CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A. Brent Ridley. S.M. 2005-09-27T20:53:49Z 2005-09-27T20:53:49Z 1999 1999 Thesis http://hdl.handle.net/1721.1/29147 43932131 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 51 leaves 4137324 bytes 4137084 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Architecture. Program in Media Arts & Sciences. Ridley, Brent, 1974- Inorganic semiconductors for printed transistors |
| title | Inorganic semiconductors for printed transistors |
| title_full | Inorganic semiconductors for printed transistors |
| title_fullStr | Inorganic semiconductors for printed transistors |
| title_full_unstemmed | Inorganic semiconductors for printed transistors |
| title_short | Inorganic semiconductors for printed transistors |
| title_sort | inorganic semiconductors for printed transistors |
| topic | Architecture. Program in Media Arts & Sciences. |
| url | http://hdl.handle.net/1721.1/29147 |
| work_keys_str_mv | AT ridleybrent1974 inorganicsemiconductorsforprintedtransistors |