Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy

Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.

Bibliographic Details
Main Author: Choy, Henry Kwong Hin, 1974-
Other Authors: Clifton G. Fonstad, Jr.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2006
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/30155

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