Gate potential control of nanofluidic devices
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | eng |
| Published: |
Massachusetts Institute of Technology
2006
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/33850 |
| _version_ | 1811075369167486976 |
|---|---|
| author | Le Coguic, Arnaud |
| author2 | Jongyoon Han. |
| author_facet | Jongyoon Han. Le Coguic, Arnaud |
| author_sort | Le Coguic, Arnaud |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005. |
| first_indexed | 2024-09-23T10:04:57Z |
| format | Thesis |
| id | mit-1721.1/33850 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T10:04:57Z |
| publishDate | 2006 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/338502019-04-10T09:04:47Z Gate potential control of nanofluidic devices Le Coguic, Arnaud Jongyoon Han. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005. Includes bibliographical references (p. 101-106). The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in micro/nanofluidic channels can be controlled by applying external potentials on the wall of the fluidic channel. In nanofluidic devices, this type of control is expected to be more efficient due to its high surface to charge ratio. We focused on a nanofluidic concentrator to study this effect. We could increase or decrease the concentration rate of the device by increasing or decreasing the surface charge potential (-potential) on the walls of the nanochannels. An increased -potential enhances the electrokinetic effects caused by electrical double layer. Which in turn accelerates the creation of a charge polarization region and improves the concentration capabilities of the device. We also have demonstrated concentration polarization effect, caused by pressure-driven flow in the nanofluidic channel, and showed that this phenomena can also be modulated by changing the gate potential of the nanofluidic devices. The gate potential effect opens the door for closed-loop real-time control of nanofluidic concentrators. by Arnaud Le Coguic. S.M. 2006-08-25T18:50:53Z 2006-08-25T18:50:53Z 2005 2005 Thesis http://hdl.handle.net/1721.1/33850 66145126 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 106 p. 3495341 bytes 3499763 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Le Coguic, Arnaud Gate potential control of nanofluidic devices |
| title | Gate potential control of nanofluidic devices |
| title_full | Gate potential control of nanofluidic devices |
| title_fullStr | Gate potential control of nanofluidic devices |
| title_full_unstemmed | Gate potential control of nanofluidic devices |
| title_short | Gate potential control of nanofluidic devices |
| title_sort | gate potential control of nanofluidic devices |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/33850 |
| work_keys_str_mv | AT lecoguicarnaud gatepotentialcontrolofnanofluidicdevices |