MBE-grown long wavelength InGaAlAs/InP laser diodes

MBE-grown long wavelength InGaAlAs/InP laser diodes

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.

Bibliographic Details
Main Author:	Choi, Woo-Young
Other Authors:	Clifton G. Fonstad.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2006
Subjects:	Electrical Engineering and Computer Science
Online Access:	http://hdl.handle.net/1721.1/34061

Similar Items

Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
by: Zhang, Weimin
Published: (2008)

Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
by: Sun, Lu
Published: (2008)

Characterization of InP based high electron mobility transistor structures grown by solid source MBE
by: Too, Patrick Heng Kwee.
Published: (2008)

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
by: Agrawal, M., et al.
Published: (2011)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009)

Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
by: Miao, Yubo.
Published: (2009)

Wavelength conversion by four wave mixing in passive InGaAsP/InP waveguides
by: Darwish, Ali Mohamed
Published: (2007)

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
by: Sun, Z. Z., et al.
Published: (2011)

High-quality InP on GaAs
by: Quitoriano, Nathaniel Joseph
Published: (2007)

InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning
by: Tang, Xiaohong, et al.
Published: (2015)

Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
by: Ernst, Alexander N. (Alexander Nicolai)
Published: (2008)

InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
by: Lee, Kenneth Sunghwan
Published: (2007)

Design an InAsN/InP quantum well laser diode working at 4 um
by: Yang, Yifan
Published: (2022)

Femtosecond nonlinearities in InGaAsP diode lasers
by: Hall, Katherine L. (Katherine Lavin)
Published: (2005)

Tunable multi-wavelength generation using InGaAsP/InP microring resonator with detectable resonance wavelength shift due to a sensing cladding section
by: Amiri, I.S., et al.
Published: (2016)

Multi dual-wavelength generation using InGaAsP/InP passive microring resonator with two sides apodized gratings
by: Ahmad, Harith, et al.
Published: (2016)

Multi dual-wavelength generation using InGaAsP/InP passive microring resonator with two sides apodized gratings
by: Ahmad, Harith, et al.
Published: (2016)

Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
by: Sinn, Matthew T. (Matthew Thomas)
Published: (2005)

Femtosecond nonlinearities in AlGaAs diode laser amplifers
by: Hultgren, Charles T. (Charles Timothy)
Published: (2006)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
by: Manvi Agrawal
Published: (2013)

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
by: Kyaw, Z., et al.
Published: (2012)

Factors affecting the shape of MBE-grown laterally aligned Fe nanowires
by: Lok, Shu K., et al.
Published: (2013)

MBE growth and investigation of (001) GaAs surfaces using SIMS
by: Croydon, W. F.
Published: (1985)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
by: Qiao, Zhongliang, et al.
Published: (2017)

RF-MBE Grown III-Nitrides Heterostructures For Hydrogen Gas Sensing Applications
by: CHIN, CHE WOEI
Published: (2017)

The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE
by: Chakraborti Sudipta
Published: (2017)

Growth, fabrication and characterisation of GaAs and InP-based HEMT structures
by: Zheng, Hai Qun.
Published: (2009)

The electrical and optical characterization of the InGaAs/InP alloy system
by: Towe, Elias D
Published: (2005)

Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP
by: Bennett, Brian R. (Brian Robert)
Published: (2006)

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
by: Wang, Bing, et al.
Published: (2018)

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
by: Wang, Bing, et al.
Published: (2017)

Nano-structured ferroelectromagnetic superlattices by laser MBE for spintronics
by: Zhu, Weiguang, et al.
Published: (2011)

Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors
by: Ng, C. W., et al.
Published: (2013)

The analysis of phase, dispersion and group delay in InGaAsP/InP microring resonator
by: Amiri, I.S., et al.
Published: (2016)

The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon
by: Barkley, Edward R. (Edward Robert)
Published: (2007)

InGaAsN/GaAs Quantum-well Laser Diodes
by: Wang, S.Z., et al.
Published: (2003)

Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors
by: Moolji, Akbar
Published: (2007)

GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD
by: Heidelberger, Christopher, et al.
Published: (2017)

Wavelength dependence of the spectral linewidth of a grating-tuned CW single-frequency external-cavity strained quantum well InGaAs/AlGaAs Grinsch diode laser
by: Hsu, Long
Published: (2005)