The fabrication and market analysis of lattice mismatched devices

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering; and, (S.M.)--Massachusetts Institute of Technology, Sloan School of Management; in conjunction with the Leaders for Manufacturing Program at MIT, 2004.

Bibliographic Details
Main Author: McGrath, John F. (John Francis), 1976-
Other Authors: Eugene A. Fitzgerald.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2006
Subjects:
Online Access:http://hdl.handle.net/1721.1/34739
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author McGrath, John F. (John Francis), 1976-
author2 Eugene A. Fitzgerald.
author_facet Eugene A. Fitzgerald.
McGrath, John F. (John Francis), 1976-
author_sort McGrath, John F. (John Francis), 1976-
collection MIT
description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering; and, (S.M.)--Massachusetts Institute of Technology, Sloan School of Management; in conjunction with the Leaders for Manufacturing Program at MIT, 2004.
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spelling mit-1721.1/347392022-01-28T19:11:54Z The fabrication and market analysis of lattice mismatched devices McGrath, John F. (John Francis), 1976- Eugene A. Fitzgerald. Leaders for Manufacturing Program. Leaders for Manufacturing Program at MIT Massachusetts Institute of Technology. Department of Materials Science and Engineering Sloan School of Management Materials Science and Engineering. Sloan School of Management. Leaders for Manufacturing Program. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering; and, (S.M.)--Massachusetts Institute of Technology, Sloan School of Management; in conjunction with the Leaders for Manufacturing Program at MIT, 2004. Includes bibliographical references (p. 80). Lattice mismatched semiconductor substrates provide a platform for higher performance semiconductor devices. Through epitaxial growth on GaAs, the lattice constant of the film can be expanded resulting in a desired InxGalxAs film on which devices can be fabricated. The resulting device exhibits enhanced performance characteristics not achievable on the initial substrate. A self-aligned mesa structure process was developed to fabricate a prototype HBT device utilizing an InxGalxAs lattice mismatched semiconductor substrate. The self-aligned mesa process eliminated the need for complicated metal etch steps by using a lift-off process and deposited contact metal as an etch mask. Selecting etches that highlight the selectivity of the device layers was critical to the success of the process. In addition to developing a process to fabricate a device, a market analysis is performed of the possible application space of the technology and derived products. In assessing the feasibility of the possible products, two main areas were addressed, the markets and the competition within each market. The technology innovation has the ability to attract a variety of markets already served by compound semiconductors. The possible markets and the competition, companies and other materials, already serving the markets are identified and characterized. To determine what markets would be attractive, the full landscape of semiconductor applications is developed. After which we were able to list the specifications and customer needs of each application as well as what materials and what companies were serving these markets. The expected performance for the innovation was then benchmarked against what we projected for the current providers in each application space. (cont.) Through the benchmarking process we were able to highlight markets in which we had a clear performance and cost advantage. by John Francis McGrath. S.M. 2006-11-08T16:29:44Z 2006-11-08T16:29:44Z 2004 2004 Thesis http://hdl.handle.net/1721.1/34739 56029798 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 80 p. 3612705 bytes 3612514 bytes application/pdf application/pdf application/pdf Massachusetts Institute of Technology
spellingShingle Materials Science and Engineering.
Sloan School of Management.
Leaders for Manufacturing Program.
McGrath, John F. (John Francis), 1976-
The fabrication and market analysis of lattice mismatched devices
title The fabrication and market analysis of lattice mismatched devices
title_full The fabrication and market analysis of lattice mismatched devices
title_fullStr The fabrication and market analysis of lattice mismatched devices
title_full_unstemmed The fabrication and market analysis of lattice mismatched devices
title_short The fabrication and market analysis of lattice mismatched devices
title_sort fabrication and market analysis of lattice mismatched devices
topic Materials Science and Engineering.
Sloan School of Management.
Leaders for Manufacturing Program.
url http://hdl.handle.net/1721.1/34739
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