Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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2007
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| Online Access: | http://hdl.handle.net/1721.1/35832 |
| _version_ | 1811091008167870464 |
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| author | Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Foo, Y.L. Fitzgerald, Eugene A. |
| author_facet | Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Foo, Y.L. Fitzgerald, Eugene A. |
| author_sort | Chew, Han Guan |
| collection | MIT |
| description | Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation and evolution of the nanocrystals. We also showed that a careful selective etching of the annealed samples in hydrofluoric solution enabled the embedded Ge nanocrystals to be liberated from the Si oxide matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals. |
| first_indexed | 2024-09-23T14:55:39Z |
| format | Article |
| id | mit-1721.1/35832 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:55:39Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | mit-1721.1/358322019-04-10T09:58:50Z Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Foo, Y.L. Fitzgerald, Eugene A. Germanium Nanocrystals Hydrogen Reduction Stress Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation and evolution of the nanocrystals. We also showed that a careful selective etching of the annealed samples in hydrofluoric solution enabled the embedded Ge nanocrystals to be liberated from the Si oxide matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals. Singapore-MIT Alliance (SMA) 2007-01-31T16:08:38Z 2007-01-31T16:08:38Z 2007-01 Article http://hdl.handle.net/1721.1/35832 en Advanced Materials for Micro- and Nano-Systems (AMMNS) 226440 bytes application/pdf application/pdf |
| spellingShingle | Germanium Nanocrystals Hydrogen Reduction Stress Chew, Han Guan Choi, Wee Kiong Chim, Wai Kin Foo, Y.L. Fitzgerald, Eugene A. Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title | Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title_full | Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title_fullStr | Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title_full_unstemmed | Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title_short | Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix |
| title_sort | study of stress evolution of germanium nanocrystals embedded in silicon oxide matrix |
| topic | Germanium Nanocrystals Hydrogen Reduction Stress |
| url | http://hdl.handle.net/1721.1/35832 |
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