Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation...
| Hlavní autoři: | , , , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
2007
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| Témata: | |
| On-line přístup: | http://hdl.handle.net/1721.1/35832 |