Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix

Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix

Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak:	Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.
Formatua:	Artikulua
Hizkuntza:	English
Argitaratua:	2007
Gaiak:	Germanium Nanocrystals Hydrogen Reduction Stress
Sarrera elektronikoa:	http://hdl.handle.net/1721.1/35832

Antzeko izenburuak

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