Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized by optical microscopy, scanning electron microscopy, x-ray diffraction, and p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3713 |