The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Format: | Thesis |
Language: | eng |
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Massachusetts Institute of Technology
2007
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Online Access: | http://hdl.handle.net/1721.1/37763 |
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author | Greenberg, David Ross |
author2 | Jesús A. del Alamo. |
author_facet | Jesús A. del Alamo. Greenberg, David Ross |
author_sort | Greenberg, David Ross |
collection | MIT |
description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. |
first_indexed | 2024-09-23T08:09:31Z |
format | Thesis |
id | mit-1721.1/37763 |
institution | Massachusetts Institute of Technology |
language | eng |
last_indexed | 2024-09-23T08:09:31Z |
publishDate | 2007 |
publisher | Massachusetts Institute of Technology |
record_format | dspace |
spelling | mit-1721.1/377632022-01-13T07:54:29Z The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor Greenberg, David Ross Jesús A. del Alamo. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995. Includes bibliographical references (p. 135-140). by David Ross Greenberg. Ph.D. 2007-06-28T12:34:39Z 2007-06-28T12:34:39Z 1995 1995 Thesis http://hdl.handle.net/1721.1/37763 32875637 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 140 p. application/pdf Massachusetts Institute of Technology |
spellingShingle | Electrical Engineering and Computer Science Greenberg, David Ross The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title | The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title_full | The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title_fullStr | The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title_full_unstemmed | The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title_short | The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor |
title_sort | physics and technology of the inalas n⁺ inp heterostructure field effect transistor |
topic | Electrical Engineering and Computer Science |
url | http://hdl.handle.net/1721.1/37763 |
work_keys_str_mv | AT greenbergdavidross thephysicsandtechnologyoftheinalasninpheterostructurefieldeffecttransistor AT greenbergdavidross physicsandtechnologyoftheinalasninpheterostructurefieldeffecttransistor |