The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Main Author: | Greenberg, David Ross |
---|---|
Other Authors: | Jesús A. del Alamo. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2007
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/37763 |
Similar Items
-
Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
by: Sinn, Matthew T. (Matthew Thomas)
Published: (2005) -
Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
by: Zhang, Weimin
Published: (2008) -
Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
by: Miao, Yubo.
Published: (2009) -
InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers
by: Lee, Kenneth Sunghwan
Published: (2007) -
Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
by: Ernst, Alexander N. (Alexander Nicolai)
Published: (2008)