An evaluation of indium antimonide quantum well transistor technology
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
Main Author: | Liu, Jingwei, M. Eng. Massachusetts Institute of Technology |
---|---|
Other Authors: | Thomas W. Eagar. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2007
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/37883 |
Similar Items
-
Thermoelectric power of indium antimonide.
by: Eser, Erten Sadullah.
Published: (2024) -
Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain
by: Guo, Luke (Luke W.)
Published: (2013) -
Commercialization of Quantum Dot White Light Emitting Diode technology
by: Zhao, Xinyue, M. Eng. Massachusetts Institute of Technology
Published: (2007) -
Antimonide-based III-V multigate transistors
by: Lu, Wenjie
Published: (2018) -
Evaluation on the thin-film phase change material-based technologies
by: Guo, Qiang, M. Eng. Massachusetts Institute of Technology
Published: (2007)