Charge storage in nanocrystal systems: Role of defects?
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
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2003
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| Online Access: | http://hdl.handle.net/1721.1/3798 |
| _version_ | 1826212620948996096 |
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| author | Kan, Eric Win Hong Choi, Wee Kiong Chim, Wai Kin Antoniadis, Dimitri A. Fitzgerald, Eugene A. |
| author_facet | Kan, Eric Win Hong Choi, Wee Kiong Chim, Wai Kin Antoniadis, Dimitri A. Fitzgerald, Eugene A. |
| author_sort | Kan, Eric Win Hong |
| collection | MIT |
| description | Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide with Ge nanocrystallites embedded in the oxide matrix was obtained. A trilayer gate stack structure that consisted of tunnel oxide/oxidized polycrystalline Si₀.₅₄Ge₀.₄₆/rf sputtered SiO₂ layers was fabricated. We found that with a 30 min oxidized middle layer, annealing the structure in N₂ ambient results in the formation of germanium nanocrystals and the annealed structure exhibits memory effect. For a trilayer structure with middle layer oxidized for 50 min, annealing in N₂ showed no nanocrystal formation and also no memory effect. Annealing the structures with 30 or 50 min oxidized middle layer in forming gas ambient resulted in nanocrystals embedded in the oxide matrix but no memory effect. This suggests that the charge storage mechanism for the trilayer structure is closely related to the interfacial traps of the nanocrystals. |
| first_indexed | 2024-09-23T15:30:20Z |
| format | Article |
| id | mit-1721.1/3798 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:30:20Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/37982019-04-12T08:07:21Z Charge storage in nanocrystal systems: Role of defects? Kan, Eric Win Hong Choi, Wee Kiong Chim, Wai Kin Antoniadis, Dimitri A. Fitzgerald, Eugene A. charge storage defects germanium nanocrystals quantum dots Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide with Ge nanocrystallites embedded in the oxide matrix was obtained. A trilayer gate stack structure that consisted of tunnel oxide/oxidized polycrystalline Si₀.₅₄Ge₀.₄₆/rf sputtered SiO₂ layers was fabricated. We found that with a 30 min oxidized middle layer, annealing the structure in N₂ ambient results in the formation of germanium nanocrystals and the annealed structure exhibits memory effect. For a trilayer structure with middle layer oxidized for 50 min, annealing in N₂ showed no nanocrystal formation and also no memory effect. Annealing the structures with 30 or 50 min oxidized middle layer in forming gas ambient resulted in nanocrystals embedded in the oxide matrix but no memory effect. This suggests that the charge storage mechanism for the trilayer structure is closely related to the interfacial traps of the nanocrystals. Singapore-MIT Alliance (SMA) 2003-12-08T16:37:09Z 2003-12-08T16:37:09Z 2004-01 Article http://hdl.handle.net/1721.1/3798 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 469856 bytes application/pdf application/pdf |
| spellingShingle | charge storage defects germanium nanocrystals quantum dots Kan, Eric Win Hong Choi, Wee Kiong Chim, Wai Kin Antoniadis, Dimitri A. Fitzgerald, Eugene A. Charge storage in nanocrystal systems: Role of defects? |
| title | Charge storage in nanocrystal systems: Role of defects? |
| title_full | Charge storage in nanocrystal systems: Role of defects? |
| title_fullStr | Charge storage in nanocrystal systems: Role of defects? |
| title_full_unstemmed | Charge storage in nanocrystal systems: Role of defects? |
| title_short | Charge storage in nanocrystal systems: Role of defects? |
| title_sort | charge storage in nanocrystal systems role of defects |
| topic | charge storage defects germanium nanocrystals quantum dots |
| url | http://hdl.handle.net/1721.1/3798 |
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