Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal 2, M2, or via-below structures) or connect up to overlaying leads...

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Bibliographic Details
Main Authors: Choi, Z.-S., Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., Maiz, J., Pey, Kin Leong, Choi, Wee Kiong
Format: Article
Language:en_US
Published: 2003
Subjects:
copper
interconnect
electromigration
reliability
Online Access:http://hdl.handle.net/1721.1/3826

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