A 77GHz power amplifier in silicon germanium BiCMOS technology
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2007
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| Online Access: | http://hdl.handle.net/1721.1/38306 |
| _version_ | 1826190973476012032 |
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| author | Nguyen, Khoa Minh |
| author2 | Charles G. Sodini. |
| author_facet | Charles G. Sodini. Nguyen, Khoa Minh |
| author_sort | Nguyen, Khoa Minh |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006. |
| first_indexed | 2024-09-23T08:48:07Z |
| format | Thesis |
| id | mit-1721.1/38306 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T08:48:07Z |
| publishDate | 2007 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/383062019-04-10T19:08:35Z A 77GHz power amplifier in silicon germanium BiCMOS technology Seventy-seven gigahertz power amplifier in silicon germanium bipolar complementary metal oxide semiconductor technology Nguyen, Khoa Minh Charles G. Sodini. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006. Includes bibliographical references (leaves 53-54). The allocation of millimeter-wave frequencies has opened new possibilities for imaging applications such as vehicular radar and concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration that were not possible when designed with III-V semiconductors. This thesis discusses the challenges and design of a 2-stage cascoded class-AB 77GHz power amplifier that could be used for imaging applications. Simulation results show a maximum output power of 20dBm, 26dB gain, and a maximum power-added efficiency (PAE) of 16%. by Khoa Minh Nguyen. S.M. 2007-08-03T18:28:19Z 2007-08-03T18:28:19Z 2006 2006 Thesis http://hdl.handle.net/1721.1/38306 153949592 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 54 leaves application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Nguyen, Khoa Minh A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title | A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title_full | A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title_fullStr | A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title_full_unstemmed | A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title_short | A 77GHz power amplifier in silicon germanium BiCMOS technology |
| title_sort | 77ghz power amplifier in silicon germanium bicmos technology |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/38306 |
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