Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2007
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| Online Access: | http://hdl.handle.net/1721.1/38671 |
| _version_ | 1811085280043597824 |
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| author | Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology |
| author2 | Judy L. Hoyt. |
| author_facet | Judy L. Hoyt. Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology |
| author_sort | Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007. |
| first_indexed | 2024-09-23T13:06:27Z |
| format | Thesis |
| id | mit-1721.1/38671 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:06:27Z |
| publishDate | 2007 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/386712019-04-11T13:01:48Z Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm Electron transport in UTB fully depleted n-MOSFETS fabricated on SSDOI with body thickness ranging from 22nm to 25 nm Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology Judy L. Hoyt. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007. Includes bibliographical references (leaves 49-53). The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm. by Leonardo Gomez. S.M. 2007-08-29T20:42:07Z 2007-08-29T20:42:07Z 2006 2007 Thesis http://hdl.handle.net/1721.1/38671 163909584 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 53 leaves application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title | Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title_full | Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title_fullStr | Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title_full_unstemmed | Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title_short | Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| title_sort | electron transport in ultrathin body fully depleted n mosfets fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/38671 |
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