Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007.

Bibliographic Details
Main Author:	Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Other Authors:	Judy L. Hoyt.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2007
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/38671

Internet

http://hdl.handle.net/1721.1/38671