InGaAsN/GaAs Quantum-well Laser Diodes
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are al...
| Autors principals: | , |
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| Format: | Article |
| Idioma: | en_US |
| Publicat: |
2003
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| Matèries: | |
| Accés en línia: | http://hdl.handle.net/1721.1/3906 |
| Sumari: | GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. |
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