InGaAsN/GaAs Quantum-well Laser Diodes
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are al...
| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | en_US |
| Publicado em: |
2003
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| Acesso em linha: | http://hdl.handle.net/1721.1/3906 |
| _version_ | 1826189493401550848 |
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| author | Wang, S.Z. Yoon, Soon Fatt |
| author_facet | Wang, S.Z. Yoon, Soon Fatt |
| author_sort | Wang, S.Z. |
| collection | MIT |
| description | GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. |
| first_indexed | 2024-09-23T08:15:38Z |
| format | Article |
| id | mit-1721.1/3906 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:15:38Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/39062019-04-09T17:38:48Z InGaAsN/GaAs Quantum-well Laser Diodes Wang, S.Z. Yoon, Soon Fatt InGaAsN/GaAs quantum well molecular beam epitaxy laser diode GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. Singapore-MIT Alliance (SMA) 2003-12-14T23:48:01Z 2003-12-14T23:48:01Z 2004-01 Article http://hdl.handle.net/1721.1/3906 en_US Innovation in Manufacturing Systems and Technology (IMST); 293743 bytes application/pdf application/pdf |
| spellingShingle | InGaAsN/GaAs quantum well molecular beam epitaxy laser diode Wang, S.Z. Yoon, Soon Fatt InGaAsN/GaAs Quantum-well Laser Diodes |
| title | InGaAsN/GaAs Quantum-well Laser Diodes |
| title_full | InGaAsN/GaAs Quantum-well Laser Diodes |
| title_fullStr | InGaAsN/GaAs Quantum-well Laser Diodes |
| title_full_unstemmed | InGaAsN/GaAs Quantum-well Laser Diodes |
| title_short | InGaAsN/GaAs Quantum-well Laser Diodes |
| title_sort | ingaasn gaas quantum well laser diodes |
| topic | InGaAsN/GaAs quantum well molecular beam epitaxy laser diode |
| url | http://hdl.handle.net/1721.1/3906 |
| work_keys_str_mv | AT wangsz ingaasngaasquantumwelllaserdiodes AT yoonsoonfatt ingaasngaasquantumwelllaserdiodes |