Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique
This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned th...
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Format: | Article |
Language: | en_US |
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2003
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Online Access: | http://hdl.handle.net/1721.1/3978 |
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author | Fonstad, Clifton G. Jr. |
author_facet | Fonstad, Clifton G. Jr. |
author_sort | Fonstad, Clifton G. Jr. |
collection | MIT |
description | This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics. |
first_indexed | 2024-09-23T15:54:35Z |
format | Article |
id | mit-1721.1/3978 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T15:54:35Z |
publishDate | 2003 |
record_format | dspace |
spelling | mit-1721.1/39782019-04-10T08:59:52Z Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique Fonstad, Clifton G. Jr. optoelectronics heterogeneous integration self assembly VCSELs III-V heterostructures This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics. Singapore-MIT Alliance (SMA) 2003-12-20T19:43:44Z 2003-12-20T19:43:44Z 2002-01 Article http://hdl.handle.net/1721.1/3978 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 96834 bytes application/pdf application/pdf |
spellingShingle | optoelectronics heterogeneous integration self assembly VCSELs III-V heterostructures Fonstad, Clifton G. Jr. Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title | Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title_full | Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title_fullStr | Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title_full_unstemmed | Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title_short | Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique |
title_sort | magnetically assisted statistical assembly a new heterogeneous integration technique |
topic | optoelectronics heterogeneous integration self assembly VCSELs III-V heterostructures |
url | http://hdl.handle.net/1721.1/3978 |
work_keys_str_mv | AT fonstadcliftongjr magneticallyassistedstatisticalassemblyanewheterogeneousintegrationtechnique |