Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm
In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed that the nitrides could be grown with both direct nitro...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
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2003
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| Online Access: | http://hdl.handle.net/1721.1/4034 |
| _version_ | 1811082021325242368 |
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| author | Wang, S.Z. Yoon, Soon Fatt Ng, Teck Khim Loke, W.K. Fan, W.J. |
| author_facet | Wang, S.Z. Yoon, Soon Fatt Ng, Teck Khim Loke, W.K. Fan, W.J. |
| author_sort | Wang, S.Z. |
| collection | MIT |
| description | In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed that the nitrides could be grown with both direct nitrogen beam and dispersive nitrogen. The nitrogen incorporation rate could be reduced by the presence of indium flux. The interaction between nitrogen and indium might lead to 3D growth mode and growth dynamics. It is proved that the increasing growth rate reduces the nitrogen incorporation efficiency. The data for nitrogen sticking coefficient are somewhat contradictive. The growth with dispersive nitrogen source causes the improvement of material quality. Fixed indium flux is a better way for the wavelength control. Also, we report some growth optimization work for better PL property and the annealing effect on the samples. Literature is sometimes reviewed for comparison. |
| first_indexed | 2024-09-23T11:56:10Z |
| format | Article |
| id | mit-1721.1/4034 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:56:10Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/40342019-04-10T08:59:58Z Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm Wang, S.Z. Yoon, Soon Fatt Ng, Teck Khim Loke, W.K. Fan, W.J. In(Ga)AsN/GaAs quantum wells molecular beam epitaxy 1.3µm 1.55µm In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed that the nitrides could be grown with both direct nitrogen beam and dispersive nitrogen. The nitrogen incorporation rate could be reduced by the presence of indium flux. The interaction between nitrogen and indium might lead to 3D growth mode and growth dynamics. It is proved that the increasing growth rate reduces the nitrogen incorporation efficiency. The data for nitrogen sticking coefficient are somewhat contradictive. The growth with dispersive nitrogen source causes the improvement of material quality. Fixed indium flux is a better way for the wavelength control. Also, we report some growth optimization work for better PL property and the annealing effect on the samples. Literature is sometimes reviewed for comparison. Singapore-MIT Alliance (SMA) 2003-12-23T15:17:21Z 2003-12-23T15:17:21Z 2002-01 Article http://hdl.handle.net/1721.1/4034 en_US Innovation in Manufacturing Systems and Technology (IMST); 849050 bytes application/pdf application/pdf |
| spellingShingle | In(Ga)AsN/GaAs quantum wells molecular beam epitaxy 1.3µm 1.55µm Wang, S.Z. Yoon, Soon Fatt Ng, Teck Khim Loke, W.K. Fan, W.J. Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title | Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title_full | Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title_fullStr | Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title_full_unstemmed | Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title_short | Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm |
| title_sort | molecular beam epitaxy of ga in asn gaas quantum wells towards 1 3µm and 1 55µm |
| topic | In(Ga)AsN/GaAs quantum wells molecular beam epitaxy 1.3µm 1.55µm |
| url | http://hdl.handle.net/1721.1/4034 |
| work_keys_str_mv | AT wangsz molecularbeamepitaxyofgainasngaasquantumwellstowards13μmand155μm AT yoonsoonfatt molecularbeamepitaxyofgainasngaasquantumwellstowards13μmand155μm AT ngteckkhim molecularbeamepitaxyofgainasngaasquantumwellstowards13μmand155μm AT lokewk molecularbeamepitaxyofgainasngaasquantumwellstowards13μmand155μm AT fanwj molecularbeamepitaxyofgainasngaasquantumwellstowards13μmand155μm |