Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm

Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm

In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed that the nitrides could be grown with both direct nitro...

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Bibliographic Details
Main Authors: Wang, S.Z., Yoon, Soon Fatt, Ng, Teck Khim, Loke, W.K., Fan, W.J.
Format: Article
Language:en_US
Published: 2003
Subjects:
In(Ga)AsN/GaAs
quantum wells
molecular beam epitaxy
1.3µm
1.55µm
Online Access:http://hdl.handle.net/1721.1/4034

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