Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics

Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.

Bibliographic Details
Main Author:	Jayaraman, Rajsekhar
Other Authors:	Charles G. Sodini.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2008
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/41582

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