Ion beam enhanced grain growth in thin films

Bibliography: p. 213-224.

Bibliographic Details
Other Authors: Atwater, Harry Albert, 1960-
Language:eng
Published: Massachusetts Institute of Technology, Research Laboratory of Electronics 2004
Subjects:
Online Access:http://hdl.handle.net/1721.1/4216
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author_facet Atwater, Harry Albert, 1960-
collection MIT
description Bibliography: p. 213-224.
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spelling mit-1721.1/42162019-04-12T08:18:31Z Ion beam enhanced grain growth in thin films Atwater, Harry Albert, 1960- TK7855.M41 R43 no.527 Bibliography: p. 213-224. Supported in part by the National Science Foundation ECS-85-06565 Supported in part by the U.S. Air Force grnat AFOSR 85-0154C Harry Albert Atwater, Jr. 2004-03-02T18:51:18Z 2004-03-02T18:51:18Z 1987 no 527 http://hdl.handle.net/1721.1/4216 eng Technical report (Massachusetts Institute of Technology. Research Laboratory of Electronics) ; 527. 224 p. 8891532 bytes application/pdf application/pdf Massachusetts Institute of Technology, Research Laboratory of Electronics
spellingShingle TK7855.M41 R43 no.527
Ion beam enhanced grain growth in thin films
title Ion beam enhanced grain growth in thin films
title_full Ion beam enhanced grain growth in thin films
title_fullStr Ion beam enhanced grain growth in thin films
title_full_unstemmed Ion beam enhanced grain growth in thin films
title_short Ion beam enhanced grain growth in thin films
title_sort ion beam enhanced grain growth in thin films
topic TK7855.M41 R43 no.527
url http://hdl.handle.net/1721.1/4216