Ion beam enhanced grain growth in thin films
Bibliography: p. 213-224.
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Language: | eng |
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Massachusetts Institute of Technology, Research Laboratory of Electronics
2004
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Online Access: | http://hdl.handle.net/1721.1/4216 |
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author2 | Atwater, Harry Albert, 1960- |
author_facet | Atwater, Harry Albert, 1960- |
collection | MIT |
description | Bibliography: p. 213-224. |
first_indexed | 2024-09-23T10:44:47Z |
id | mit-1721.1/4216 |
institution | Massachusetts Institute of Technology |
language | eng |
last_indexed | 2024-09-23T10:44:47Z |
publishDate | 2004 |
publisher | Massachusetts Institute of Technology, Research Laboratory of Electronics |
record_format | dspace |
spelling | mit-1721.1/42162019-04-12T08:18:31Z Ion beam enhanced grain growth in thin films Atwater, Harry Albert, 1960- TK7855.M41 R43 no.527 Bibliography: p. 213-224. Supported in part by the National Science Foundation ECS-85-06565 Supported in part by the U.S. Air Force grnat AFOSR 85-0154C Harry Albert Atwater, Jr. 2004-03-02T18:51:18Z 2004-03-02T18:51:18Z 1987 no 527 http://hdl.handle.net/1721.1/4216 eng Technical report (Massachusetts Institute of Technology. Research Laboratory of Electronics) ; 527. 224 p. 8891532 bytes application/pdf application/pdf Massachusetts Institute of Technology, Research Laboratory of Electronics |
spellingShingle | TK7855.M41 R43 no.527 Ion beam enhanced grain growth in thin films |
title | Ion beam enhanced grain growth in thin films |
title_full | Ion beam enhanced grain growth in thin films |
title_fullStr | Ion beam enhanced grain growth in thin films |
title_full_unstemmed | Ion beam enhanced grain growth in thin films |
title_short | Ion beam enhanced grain growth in thin films |
title_sort | ion beam enhanced grain growth in thin films |
topic | TK7855.M41 R43 no.527 |
url | http://hdl.handle.net/1721.1/4216 |