Electric field engineering in GaN high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008.
Main Author: | Zhao, Xu, S.M. Massachusetts Institute of Technology |
---|---|
Other Authors: | Tomás Palacios. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/43062 |
Similar Items
-
Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
by: Dreyer, Cyrus E., et al.
Published: (2017) -
Physics of electrical degradation in GaN high electron mobility transistors
by: Joh, Jungwoo
Published: (2010) -
Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
by: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Published: (2017) -
Fabrication of graphene-on-GaN vertical transistors
by: Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology
Published: (2015) -
Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
by: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Published: (2014)