Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1721.1/44366 |
| _version_ | 1811087784571568128 |
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| author | Chung, Jinwook W. (Jinwook Will) |
| author2 | Tomás Palacios. |
| author_facet | Tomás Palacios. Chung, Jinwook W. (Jinwook Will) |
| author_sort | Chung, Jinwook W. (Jinwook Will) |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. |
| first_indexed | 2024-09-23T13:51:55Z |
| format | Thesis |
| id | mit-1721.1/44366 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:51:55Z |
| publishDate | 2009 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/443662019-04-12T09:52:34Z Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors Chung, Jinwook W. (Jinwook Will) Tomás Palacios. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (leaves 77-80). In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency performance could be improved, the superior breakdown characteristics of nitride semiconductors would make these devices the best option for power amplifiers at any frequency. To achieve this goal, we have first identified some critical parameters that limit the high frequency performance of AlGaN/GaN HEMTs and then we have demonstrated several new technologies to increase the performance. Some of these technologies include advanced drain delay engineering, charge control in the channel and new N-face GaN HEMTs. Although more work is needed in the future to combine all these new technologies, the initial results are extremely promising. by Jinwook W. Chung. S.M. 2009-01-30T16:37:44Z 2009-01-30T16:37:44Z 2008 2008 Thesis http://hdl.handle.net/1721.1/44366 276937615 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 80 leaves application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Chung, Jinwook W. (Jinwook Will) Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title | Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title_full | Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title_fullStr | Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title_full_unstemmed | Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title_short | Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors |
| title_sort | advanced technologies for improving high frequency performance of algan gan high electron mobility transistors |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/44366 |
| work_keys_str_mv | AT chungjinwookwjinwookwill advancedtechnologiesforimprovinghighfrequencyperformanceofalganganhighelectronmobilitytransistors |