RF breakdown effects in microwave power amplifiers
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | eng |
| Published: |
Massachusetts Institute of Technology
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/45612 |
| _version_ | 1826191593597566976 |
|---|---|
| author | Arumilli, Gautham Venkat |
| author2 | Douglas W. White and Jesús A. del Alamo. |
| author_facet | Douglas W. White and Jesús A. del Alamo. Arumilli, Gautham Venkat |
| author_sort | Arumilli, Gautham Venkat |
| collection | MIT |
| description | Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. |
| first_indexed | 2024-09-23T08:58:19Z |
| format | Thesis |
| id | mit-1721.1/45612 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T08:58:19Z |
| publishDate | 2009 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/456122019-04-10T20:00:43Z RF breakdown effects in microwave power amplifiers Radio frequency breakdown effects in microwave power amplifiers Arumilli, Gautham Venkat Douglas W. White and Jesús A. del Alamo. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Includes bibliographical references (p. 95-98). Electrical stresses in the transistors of high-efficiency switching power amplifiers can lead to hot-electron-induced "breakdown" in these devices. This thesis explores issues related to breakdown in the Transcom TC2571 PHEMT, and the effects this has on the Draper Laboratory 2.3 GHz microwave power amplifier in which the transistor is used. Characterization of breakdown was performed under DC and RF drive conditions, and shows the surprising role of impact ionization at low temperatures in DC off-state breakdown, as well as the apparent prevalence of on-state breakdown under RF drive. DC characterization shows that breakdown walkout and recovery both proceed more quickly at higher temperatures, and also shows that breakdown stress might lead to the permanent creation of traps that degrade breakdown voltage. Walkout under RF drive decreases amplifier gain at lower levels of RF input drive, but appears to have no negative effect on amplifier saturated output power. The use of temperature-compensated input drive and a diode to clamp negative gate voltage swing are also explored as circuit design techniques that can mitigate device degradation due to breakdown stress. by Gautham Venkat Arumilli. M.Eng. 2009-06-25T20:34:26Z 2009-06-25T20:34:26Z 2007 2007 Thesis http://hdl.handle.net/1721.1/45612 319434330 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 98 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Arumilli, Gautham Venkat RF breakdown effects in microwave power amplifiers |
| title | RF breakdown effects in microwave power amplifiers |
| title_full | RF breakdown effects in microwave power amplifiers |
| title_fullStr | RF breakdown effects in microwave power amplifiers |
| title_full_unstemmed | RF breakdown effects in microwave power amplifiers |
| title_short | RF breakdown effects in microwave power amplifiers |
| title_sort | rf breakdown effects in microwave power amplifiers |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/45612 |
| work_keys_str_mv | AT arumilligauthamvenkat rfbreakdowneffectsinmicrowavepoweramplifiers AT arumilligauthamvenkat radiofrequencybreakdowneffectsinmicrowavepoweramplifiers |