Molecular and quantum dot floating gate non-volatile memories
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1721.1/45827 |
| _version_ | 1826208013352960000 |
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| author | Abdu, Hassen |
| author2 | Vladimir Bulovic. |
| author_facet | Vladimir Bulovic. Abdu, Hassen |
| author_sort | Abdu, Hassen |
| collection | MIT |
| description | Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. |
| first_indexed | 2024-09-23T13:58:56Z |
| format | Thesis |
| id | mit-1721.1/45827 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T13:58:56Z |
| publishDate | 2009 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/458272019-04-12T09:59:29Z Molecular and quantum dot floating gate non-volatile memories Abdu, Hassen Vladimir Bulovic. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (p. 75-76). Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace the continuous floating gate, where charge is stored, with a segmented charge storage film, so that leakage through defects in the tunneling oxide would be localized. We first explored using quantum dots as possible floating gate replacements. After conducting simulations, we established the need for the smallest possible segmented structures. This led us to the use of molecular films as floating gates in non-volatile flash memories. As an example, a single organic molecule of 3,4,9,10 -parylene tetracarboxylic dianhydride (PTCDA) occupies lnm2 in area and is capable of storing and retaining a single charge. If a defect is present in the tunneling oxide below the floating gate, only a few molecules of PTCDA would be affected due to poor lateral conduction between PTCDA molecules. We can, therefore, project that such molecular thin films of PTCDA are likely to meet demanding size and packing density requirements of advancing flash memory technology. by Hassen Abdu. M.Eng. 2009-06-30T16:23:04Z 2009-06-30T16:23:04Z 2008 2008 Thesis http://hdl.handle.net/1721.1/45827 319435526 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 76 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Abdu, Hassen Molecular and quantum dot floating gate non-volatile memories |
| title | Molecular and quantum dot floating gate non-volatile memories |
| title_full | Molecular and quantum dot floating gate non-volatile memories |
| title_fullStr | Molecular and quantum dot floating gate non-volatile memories |
| title_full_unstemmed | Molecular and quantum dot floating gate non-volatile memories |
| title_short | Molecular and quantum dot floating gate non-volatile memories |
| title_sort | molecular and quantum dot floating gate non volatile memories |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/45827 |
| work_keys_str_mv | AT abduhassen molecularandquantumdotfloatinggatenonvolatilememories |