An organic thin-film transistor circuit for large-area temperature-sensing

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.

Bibliographic Details
Main Author: He, David Da
Other Authors: Charles G. Sodini.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2009
Subjects:
Online Access:http://hdl.handle.net/1721.1/45833
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author He, David Da
author2 Charles G. Sodini.
author_facet Charles G. Sodini.
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description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
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spelling mit-1721.1/458332019-04-12T09:59:38Z An organic thin-film transistor circuit for large-area temperature-sensing He, David Da Charles G. Sodini. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (leaves 81-84). This thesis explores the application of organic thin-film transistors (OTFTs) for temperature-sensing. The goal of this work is twofold: the understanding of the OTFT's electrical characteristics' temperature dependence, and the creation of OTFT temperature-sensing circuits. We find that OTFTs have temperature-dependent current-voltage (I-V) characteristics that are determined by trap states inside the bandgap. Based on this understanding, a DC OTFT circuit model is developed which accurately fits the measured I-V data in all regions of device operation and at different temperatures. Using this model, we design and fabricate two OTFT temperature-sensing circuits. The first circuit achieves a responsivity of 22mV/°C with 12nW of power dissipation, but has a nonlinear temperature response that is dependent on threshold voltage shifts. The second circuit achieves a responsivity of 5.9mV/°C with 88nW of power dissipation, and has a highly linear temperature response that is tolerant of threshold voltage shifts. Both circuits exceed silicon temperature sensors' typical temperature responsivity of 0.5 - 4mrV/C while dissipating less power. These traits, along with the OTFT's ability to be fabricated on large-area and flexible substrates, allow OTFT temperature sensors to be used in both existing and new application environments. by David Da He. S.M. 2009-06-30T16:23:48Z 2009-06-30T16:23:48Z 2008 2008 Thesis http://hdl.handle.net/1721.1/45833 319548321 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 84 leaves application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
He, David Da
An organic thin-film transistor circuit for large-area temperature-sensing
title An organic thin-film transistor circuit for large-area temperature-sensing
title_full An organic thin-film transistor circuit for large-area temperature-sensing
title_fullStr An organic thin-film transistor circuit for large-area temperature-sensing
title_full_unstemmed An organic thin-film transistor circuit for large-area temperature-sensing
title_short An organic thin-film transistor circuit for large-area temperature-sensing
title_sort organic thin film transistor circuit for large area temperature sensing
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/45833
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