Design and fabrication of quantum-dot lasers
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1721.1/45888 |
| _version_ | 1811081583633891328 |
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| author | Nabanja, Sheila |
| author2 | Leslie A. Kolodziejski. |
| author_facet | Leslie A. Kolodziejski. Nabanja, Sheila |
| author_sort | Nabanja, Sheila |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. |
| first_indexed | 2024-09-23T11:49:00Z |
| format | Thesis |
| id | mit-1721.1/45888 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T11:49:00Z |
| publishDate | 2009 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/458882019-04-12T10:00:07Z Design and fabrication of quantum-dot lasers Nabanja, Sheila Leslie A. Kolodziejski. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (p. 87-89). Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current characteristics. This thesis investigates the lasing characteristics of a ridge-waveguide laser containing seven layers of quantum dots as the active region. A summary of the electrical and optical performance data of the heterostructure quantum dot lasers, as well as previously fabricated quantum well lasers, is presented. The motivation of using InAs quantum dots in the active region is to produce near infrared emission for telecommunication applications. by Sheila Nabanja. S.M. 2009-06-30T16:32:51Z 2009-06-30T16:32:51Z 2008 2008 Thesis http://hdl.handle.net/1721.1/45888 320436763 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 89 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Nabanja, Sheila Design and fabrication of quantum-dot lasers |
| title | Design and fabrication of quantum-dot lasers |
| title_full | Design and fabrication of quantum-dot lasers |
| title_fullStr | Design and fabrication of quantum-dot lasers |
| title_full_unstemmed | Design and fabrication of quantum-dot lasers |
| title_short | Design and fabrication of quantum-dot lasers |
| title_sort | design and fabrication of quantum dot lasers |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/45888 |
| work_keys_str_mv | AT nabanjasheila designandfabricationofquantumdotlasers |