Atomistics of dislocation mobility in silicon : core structure and mechanisms

Atomistics of dislocation mobility in silicon : core structure and mechanisms

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Engineering, 1997.

Bibliographic Details
Main Author: Justo Filho, João F
Other Authors: Sidney Yip, Vasily V. Bulatov.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2009
Subjects:
Nuclear Engineering
Online Access:http://hdl.handle.net/1721.1/46072

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