Toxic gas sensors using thin film transistor platform at low temperature
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1721.1/46669 |
| _version_ | 1811077290587586560 |
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| author | Jin, Yoonsil |
| author2 | Harry L. Tuller. |
| author_facet | Harry L. Tuller. Jin, Yoonsil |
| author_sort | Jin, Yoonsil |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009. |
| first_indexed | 2024-09-23T10:40:37Z |
| format | Thesis |
| id | mit-1721.1/46669 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T10:40:37Z |
| publishDate | 2009 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/466692019-04-12T10:03:47Z Toxic gas sensors using thin film transistor platform at low temperature Jin, Yoonsil Harry L. Tuller. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. Materials Science and Engineering. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009. Includes bibliographical references (leaves [71-73]). Semiconducting metal-oxides such as SnO₂, TiO₂, ZnO and WO₃ are commonly used for gas sensing in the form of thin film resistors (TFRs) given their high sensitivity to many vapor species, simple construction and capability for miniaturization. Furthermore, they are generally more stable than polymer-based gas sensors. However, unlike polymers, metal oxide gas sensors must typically be operated between 200-400°C to insure rapid kinetics. Another problem impacting TFR performance and reproducibility is related to poorly understood substrate-semiconductor film interactions. Space charges at this heterojunction are believed to influence chemisorption on the semiconductor-gas interface, but unfortunately, in an unpredictable manner. In this study, the feasibility of employing illumination and the thin film transistor (TFT) platform as a means of reducing operation temperature was investigated on ZnO based TFTs for gas sensors applications. Response to NO₂ is observed at significantly reduced temperature. Photoconductivity measurements, performed as a function of temperature on ZnO based TFRs, indicate that this results in a photon-induced desorption process. Also, transient changes in TFT channel conductance and transistor threshold voltage are obtained with application of gate bias, suggesting that TFTs offer additional control over chemisorption at the semiconductor-gas interface. by Yoonsil Jin. S.M. 2009-08-26T17:16:30Z 2009-08-26T17:16:30Z 2009 2009 Thesis http://hdl.handle.net/1721.1/46669 428091372 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 70, [3] leaves: application/pdf Massachusetts Institute of Technology |
| spellingShingle | Materials Science and Engineering. Jin, Yoonsil Toxic gas sensors using thin film transistor platform at low temperature |
| title | Toxic gas sensors using thin film transistor platform at low temperature |
| title_full | Toxic gas sensors using thin film transistor platform at low temperature |
| title_fullStr | Toxic gas sensors using thin film transistor platform at low temperature |
| title_full_unstemmed | Toxic gas sensors using thin film transistor platform at low temperature |
| title_short | Toxic gas sensors using thin film transistor platform at low temperature |
| title_sort | toxic gas sensors using thin film transistor platform at low temperature |
| topic | Materials Science and Engineering. |
| url | http://hdl.handle.net/1721.1/46669 |
| work_keys_str_mv | AT jinyoonsil toxicgassensorsusingthinfilmtransistorplatformatlowtemperature |