Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1998.
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Format: | Thesis |
Language: | eng |
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Massachusetts Institute of Technology
2009
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Online Access: | http://hdl.handle.net/1721.1/47697 |
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author | Favrot, Gervais F. (Gervais Freret), 1948- |
author2 | Don Heiman and Peter A. Wolff. |
author_facet | Don Heiman and Peter A. Wolff. Favrot, Gervais F. (Gervais Freret), 1948- |
author_sort | Favrot, Gervais F. (Gervais Freret), 1948- |
collection | MIT |
description | Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1998. |
first_indexed | 2024-09-23T08:45:37Z |
format | Thesis |
id | mit-1721.1/47697 |
institution | Massachusetts Institute of Technology |
language | eng |
last_indexed | 2024-09-23T08:45:37Z |
publishDate | 2009 |
publisher | Massachusetts Institute of Technology |
record_format | dspace |
spelling | mit-1721.1/476972020-07-14T17:37:35Z Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb Simulated spin-flip Raman scattering in n-type InSb Favrot, Gervais F. (Gervais Freret), 1948- Don Heiman and Peter A. Wolff. Massachusetts Institute of Technology. Department of Physics Physics Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Physics, 1998. Includes bibliographical references (p. 187-193). This thesis is a theoretical and experimental study of inter-Landau level transitions in n-type InSb. Three main topics are considered: (i) The first observation was made of a magnetic field reversal effect in a spin-conserving inter-Landau level absorption transition. (ii) Advancements were made in the theory of intraband absorption and scattering processes. (iii) Experiments were carried out on the spin-flip Raman laser to examine crystal anisotropy. An important feature of this research is the prediction and observation of a striking magnetic field reversal effect in the inter-Landau level magnetoabsorption in n-InSb. The magnitude of the absorption associated with two transitions is observed to change by a factor of nearly 3 upon reversal of magnetic field direction. The effect results from the inversion asymmetry of the tetrahedral zincblende structure. The transitions which show the effect are the double cyclotron resonance and the double cyclotron resonance combined with spin-flip. The reversal effect involves the interference between two matrix elements which contribute to the absorption, one having tetrahedral symmetry, and the other spherical symmetry. The tetrahedral matrix element results from the inversion-asymmetry mechanism. The isotropic matrix element is associated with the wave vector-dependent electric quadrupole EQ and magnetic dipole MD absorption. The isotropic matrix element changes sign on reversal of q, and the one for inversion asymmetry changes sign on reversal of B, so the interference term changes sign on reversal of either q or B. Stimulated spin-flip Raman (SFR) scattering has been studied in applied magnetic fields up to 18 T. For 10-[mu]m pumping, the SFR laser output is dominated by structure associated with linear intraband absorption and shows significant anisotropy with regard to crystal orientation in the applied field. Calculations have been made for the transition matrix elements and absorption coefficients for the anisotropic intra-conduction-band magneto-optical transitions. The theory includes warping-induced transitions and the effects of band nonparabolicity in the Pidgeon and Brown model. Reasonable agreement between theory and experiment is obtained. by Gervais F. Favrot, Jr. Ph.D. 2009-10-01T15:33:08Z 2009-10-01T15:33:08Z 1998 1998 Thesis http://hdl.handle.net/1721.1/47697 42282498 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 320 p. application/pdf Massachusetts Institute of Technology |
spellingShingle | Physics Favrot, Gervais F. (Gervais Freret), 1948- Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title | Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title_full | Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title_fullStr | Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title_full_unstemmed | Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title_short | Magnetic field reversal effect in inter-Landau level absorption and simulated spin-flip Raman scattering in n-type InSb |
title_sort | magnetic field reversal effect in inter landau level absorption and simulated spin flip raman scattering in n type insb |
topic | Physics |
url | http://hdl.handle.net/1721.1/47697 |
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